JPS626664B2 - - Google Patents

Info

Publication number
JPS626664B2
JPS626664B2 JP53064557A JP6455778A JPS626664B2 JP S626664 B2 JPS626664 B2 JP S626664B2 JP 53064557 A JP53064557 A JP 53064557A JP 6455778 A JP6455778 A JP 6455778A JP S626664 B2 JPS626664 B2 JP S626664B2
Authority
JP
Japan
Prior art keywords
gate
oxide film
substrate
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53064557A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54154979A (en
Inventor
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6455778A priority Critical patent/JPS54154979A/ja
Publication of JPS54154979A publication Critical patent/JPS54154979A/ja
Publication of JPS626664B2 publication Critical patent/JPS626664B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP6455778A 1978-05-29 1978-05-29 Manufacture of insulated gate type semiconductor device Granted JPS54154979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6455778A JPS54154979A (en) 1978-05-29 1978-05-29 Manufacture of insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6455778A JPS54154979A (en) 1978-05-29 1978-05-29 Manufacture of insulated gate type semiconductor device

Publications (2)

Publication Number Publication Date
JPS54154979A JPS54154979A (en) 1979-12-06
JPS626664B2 true JPS626664B2 (en]) 1987-02-12

Family

ID=13261642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6455778A Granted JPS54154979A (en) 1978-05-29 1978-05-29 Manufacture of insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS54154979A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503451A (en) * 1982-07-30 1985-03-05 Motorola, Inc. Low resistance buried power bus for integrated circuits
JPH0750695B2 (ja) * 1986-06-10 1995-05-31 松下電子工業株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151081A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Mos type semiconductor apparatus and that manufacturing method
JPS5931229B2 (ja) * 1976-07-15 1984-07-31 松下電器産業株式会社 Ｍｏｓ型半導体集積回路の製造方法

Also Published As

Publication number Publication date
JPS54154979A (en) 1979-12-06

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